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Processing of novel SiC and group III-nitride based micro- and nanomechanical devices

✍ Scribed by Foerster, Ch. ;Cimalla, V. ;Brueckner, K. ;Lebedev, V. ;Stephan, R. ;Hein, M. ;Ambacher, O.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
201 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Micro‐ and nanoelectromechanical systems are being designed and intensively investigated for their use in various sensor applications. In this issue's Editor's Choice [1] micromechanical resonator beams with high fundamental frequencies were realized. The cover picture shows a scanning electron microscopy image of a 3C–SiC beam with middle electrode for capacitive read‐out as well as a finite element method simulation of the maximum oscillation amplitude.

The first author, Christian Förster, works on the epitaxial growth of hetero‐ and nanostructures based on wide band gap semiconductors and the processing of electronic and sensor devices in the Center for Micro‐ and Nanotechnologies of the Technical University Ilmenau, Germany.

The present issue of physica status solidi (a) contains Original Papers presented at the 7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies held in Montpellier, France, 1–4 June 2004. Further papers from EXMATEC 2004 are published in physica status solidi (c) 2, No. 4 (2005). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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