Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate
✍ Scribed by Anceau, S. ;Lefebvre, P. ;Suski, T. ;Konczewicz, L. ;Hirayama, H. ;Aoyagi, Y.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 141 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The competition between radiative and nonradiative recombination of electron‐hole pairs in (Al,In,Ga)N/(Al,In,Ga)N quantum wells of two different compositions and various well widths was investigated in order to understand the microscopic mechanisms of the highly intense light emission from this type of structures. By using time‐resolved photoluminescence, we have verified that one can adjust the compositions of the quaternaries so as to optimize the confinement effects and to minimize the built‐in electric field which is present in such hexagonal group‐III nitride based QWs. The role of local potential fluctuations in the quaternary alloy on the localization of carriers was studied and analyzed by measuring the photoluminescence energy, intensity and dynamics versus temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)