𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Group-III-Nitride Based Gas Sensing Devices

✍ Scribed by Schalwig, J. ;M�ller, G. ;Ambacher, O. ;Stutzmann, M.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
140 KB
Volume
185
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Processing of novel SiC and group III-ni
Processing of novel SiC and group III-nitride based micro- and nanomechanical devices
✍ Foerster, Ch. ;Cimalla, V. ;Brueckner, K. ;Lebedev, V. ;Stephan, R. ;Hein, M. ;A 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 201 KB

## Abstract Micro‐ and nanoelectromechanical systems are being designed and intensively investigated for their use in various sensor applications. In this issue's Editor's Choice [1] micromechanical resonator beams with high fundamental frequencies were realized. The cover picture shows a scanning

Processing of novel SiC and group III-ni
Processing of novel SiC and group III-nitride based micro- and nanomechanical devices
✍ Foerster, Ch. ;Cimalla, V. ;Brueckner, K. ;Lebedev, V. ;Stephan, R. ;Hein, M. ;A 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 208 KB

## Abstract Micromechanical 3C‐SiC‐ and AlN‐resonator beams with resonant frequencies between 20 kHz and 5 MHz have been realized. The 200 nm thin epitaxial SiC and group III‐nitrides layers were grown on silicon (100) and (111) oriented substrates, respectively. Subsequent the beams were dry‐etche

High-Field Electron Transport in Nanosca
High-Field Electron Transport in Nanoscale Group-III Nitride Devices
✍ S.M. Komirenko; K.W. Kim; V.A. Kochelap; M.A. Stroscio 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 2 views

Focusing on the short-size group-III nitride heterostructures, we have developed a model which takes into account main features of transport of electrons injected into a polar semiconductor under high electric fields. The model is based on an exact analytical solution of Boltzmann transport equation