Processing high-quality silicon for microstrip detectors

✍ Scribed by F. Nava; G. Ottaviani; R. Tonini; S. Frabboni; A.Alberigi Quaranta; P. Cantoni; P.L. Frabetti; L. Stagni; G. Queirolo; P.F. Manfredi

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 558 KB
• Volume: 32
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(92)80014-t

✦ Synopsis

An investigation has been made into the behaviour of high-purity silicon (HP-%) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 kS1 cm. The investigation is centred on standard bipolar processes based on ion implantation. It is found that, comparing the processes used, the best diode characteristics are achieved when a heat treatment at 600 "C is used after the ion-implantation step. whereas the worst results from an implantation and a 900 "C heat treatment. Thus it is shown that if integration of the electronic circuitry and the detector on a single chip is required, then the high-temperature heat treatments must be done before the ion-implantation step needed for detector fabrication.