Processing high-quality silicon for micr
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F. Nava; G. Ottaviani; R. Tonini; S. Frabboni; A.Alberigi Quaranta; P. Cantoni;
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Article
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1992
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Elsevier Science
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English
β 558 KB
An investigation has been made into the behaviour of high-purity silicon (HP-%) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 kS1 cm. The investigation is centred on standard bipolar processes based on ion implantation. It is found that, comparing the proce