✦ LIBER ✦

Process and Characteristics of Fully Silicided Source/Drain (FSD) Thin-Film Transistors

✍ Scribed by Chia-Pin Lin; Yi-Hsuan Hsiao; Bing-Yue Tsui

Book ID: 114618520
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 859 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.885651

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Schottky barrier thin-film transistor (S

Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension

✍ Lin, H.C.; Yeh, K.L.; Huang, R.G.; Lin, C.Y.; Huang, T.Y. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 69 KB

Characteristics of polycrystalline silic

Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

✍ Shin, Jin-Wook; Cho, Won-Ju; Choi, Chel-Jong; Jang, Moongyu 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 558 KB

Characteristics of Schottky-barrier sour

Characteristics of Schottky-barrier source/drain metal-oxide-polycrystalline thin-film transistors on glass substrates

✍ Seung-Min Jung; Won-Ju Cho; Jongwan Jung 📂 Article 📅 2012 🏛 The Korean Physical Society 🌐 English ⚖ 301 KB

Source-drain characteristics and field e

Source-drain characteristics and field effect studies of CdS thin film field effect transistor structures

✍ V. Damodara Das; G.S. Srinivasan 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 54 KB

Activation energy of source-drain curren

Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors

✍ Khan, B.A.; Pandya, R. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 734 KB

The role of source and drain material in

The role of source and drain material in the performance of GIZO based thin-film transistors

✍ Barquinha, P. ;Vilà, A. ;Gonçalves, G. ;Pereira, L. ;Martins, R. ;Morante, J. ;F 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 262 KB

## Abstract Indium tin oxide (ITO) has been used as the prefered electrode material for the emerging area of transparent electronics, namely for thin‐film transistors (TFTs) based on oxide semiconductors. This work pretends to investigate different materials to replace ITO in inverted‐staggered TFT