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Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors

✍ Scribed by Khan, B.A.; Pandya, R.


Book ID
114536724
Publisher
IEEE
Year
1990
Tongue
English
Weight
734 KB
Volume
37
Category
Article
ISSN
0018-9383

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## Abstract Indium tin oxide (ITO) has been used as the prefered electrode material for the emerging area of transparent electronics, namely for thin‐film transistors (TFTs) based on oxide semiconductors. This work pretends to investigate different materials to replace ITO in inverted‐staggered TFT