Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

✍ Scribed by Shin, Jin-Wook; Cho, Won-Ju; Choi, Chel-Jong; Jang, Moongyu

• Book ID: 120221101
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 558 KB
• Volume: 94
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3073047