Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

✍ Scribed by Huang, Shih-Cheng; Shen, Kun-Ching; Tu, Po-Min; Wuu, Dong-Sing; Kuo, Hao-Chung; Horng, Ray-Hua

• Book ID: 120466285
• Publisher: SPIE
• Year: 2012
• Weight: 1010 KB
• Category: Article
• DOI: 10.1117/12.909580