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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

✍ Scribed by Perlin, Piotr; Czyszanowski, Tomasz; Marona, Lucja; Grzanka, Szymon; Kafar, Anna; Stanczyk, Szymon; Suski, Tadek; Leszczyski, Mike; Bokowski, Michal; Muzioł, Grzegorz; Kuc, Maciej; Sarzała, Robert

Book ID: 120466282
Publisher: SPIE
Year: 2012
Weight: 849 KB
Category: Article
DOI: 10.1117/12.906866

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