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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

✍ Scribed by Izyumskaya, N.; Liu, S. J.; Avrutin, V.; Okur, S.; Zhang, F.; Ozgür, U.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Smith, D. J.; Morkoc, H.

Book ID: 120466283
Publisher: SPIE
Year: 2012
Weight: 668 KB
Category: Article
DOI: 10.1117/12.909235

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