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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Temperature dependent behavior of the SPV for n-type GaN

✍ Scribed by McNamara, J. D.; Foussekis, M.; Liu, H.; Morkoc, H.; Reshchikov, M. A.; Baski, A. A.

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