𝔖 Bobbio Scriptorium

✦ LIBER ✦

Problem of mechanism in Si autoepitaxy with condensation from molecular beams in vacuum: A V Popov et al, Sb Nauchn Tr Probl Mikroelektron, Mosk Inst Elektron Tekh, 4, 1969, 102–108 (in Russian)

Publisher: Elsevier Science
Year: 1971
Tongue: English
Weight: 151 KB
Volume: 21
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(71)90179-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deposition of autoepitaxial silicon film

Deposition of autoepitaxial silicon films from molecular beams in high vacuum with controlled gas composition: V A Ushakov et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 192–200 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The influence of carbon dioxide on the g

The influence of carbon dioxide on the growth mechanism of silicon autoepitaxial films during vacuum deposition: A V Popov et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 109–112 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 307 KB

Heteroepitaxy of germanium from solution

Heteroepitaxy of germanium from solution in melt: A I Pekarev et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 268–275 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Obtaining heteroepitaxial layers of Ge a

Obtaining heteroepitaxial layers of Ge and Si with scanning electron beam heating: A P Dostanko et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 246–251 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Investigation of the mechanism of german

Investigation of the mechanism of germanium heteroepitaxy on GaAs during growth from a molecular beam in vacuum: Yu D Chistyakov et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 168–175 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 151 KB

Growth characteristics of autoepitaxial

Growth characteristics of autoepitaxial films of silicon and germanium using a synthetic liquid phase film: Yu D Chistyakov et al, Sb Nauchn Tr Probl Mikroelektron, 4, Mosk Inst Elektron Tekh, 1969, 201–209 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 155 KB