Preparation, structure, and photoluminescence properties of Ga2O3/SnO2 coaxial nanowires

✍ Scribed by Changhyun Jin; Hyunsoo Kim; Kyungjoon Baek; Hyoun Woo Kim; Chongmu Lee

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 223 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200900648

✦ Synopsis

Ga 2 O 3 /SnO 2 coaxial nanowires were synthesized by thermal evaporation of GaN powders and then atomic layer deposition of SnO 2 . Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the Ga 2 O 3 cores and the SnO 2 shells of the coaxial nanowires after thermal annealing are single crystals with monoclinic and simple orthorhombic structures, respectively, although the SnO 2 shells are amorphous before annealing. Our results also show that photoluminescence (PL) emission can be enhanced by thermal annealing in an H 2 /N 2 atmosphere. EDX concentration profile suggests that the enhancement in the bluish green emission is due to the increase in the concentration of the Ga vacancies in the cores during the H 2 /N 2 annealing. On the other hand, a red emission is newly formed while the bluish green emission is degraded by annealing in an oxygen or nitrogen atmosphere.