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Preparation, structure and photoluminescence properties of SiO2–coated ZnS nanowires

✍ Scribed by Changhyun Jin; Jungkeun Lee; Kyungjoon Baek; Chongmu Lee


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
232 KB
Volume
45
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

It is essential to passivate one‐dimensional (1D) nanostructures with insulating materials to avoid crosstalking as well as to protect them from contamination and oxidation. The structure and influence of thermal annealing on the photoluminescence properties of ZnS‐core/SiO~2~‐shell nanowires synthesized by the thermal evaporation of ZnS powders followed by the sputter deposition of SiO~2~ were investigated. Transmission electron microscopy and X‐ray diffraction analyses revealed that the cores and shells of the core‐shell nanowires were single crystal zinc blende‐type ZnO and amorphous SiO~2~, respectively. Photoluminescence (PL) measurement showed that the core‐shell nanowires had a green emission band centered at around 525 nm with a shoulder at around 385 nm. The PL emission of the core‐shell nanowires was enhanced in intensity by annealing in an oxidative atmosphere and further enhanced by subsequently annealing in a reducing atmosphere. Also the origin of the enhancement of the green emission by annealing is discussed based on the energy‐dispersive X‐ray spectroscopy analysis results. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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Ga 2 O 3 /SnO 2 coaxial nanowires were synthesized by thermal evaporation of GaN powders and then atomic layer deposition of SnO 2 . Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the Ga 2 O 3 cores and the SnO 2 shells of the coaxial nanowires afte