Structural Energetic, Electronic, Bonding, and Vibrational Properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 Clusters
β Scribed by S. Gowtham; Mrinalini Deshpande; Aurora Costales; Ravindra Pandey
- Publisher
- John Wiley and Sons
- Year
- 2005
- Weight
- 8 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0931-7597
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Both monoclinic Ga 2 O 3 and Wurtzite-structured GaN are wide-band-gap semiconductors (energy gap, E g = 4.9 eV and 3.39 eV, respectively) that exhibit luminescence and conduction properties, thus, they have potential applications in optoelectronic devices, [1][2][3][4][5][6][7][8] high-temperature
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