Ga2O3 and GaN Semiconductor Hollow Spher
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Xiaoming Sun; Yadong Li
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Article
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2004
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John Wiley and Sons
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English
โ 175 KB
Both monoclinic Ga 2 O 3 and Wurtzite-structured GaN are wide-band-gap semiconductors (energy gap, E g = 4.9 eV and 3.39 eV, respectively) that exhibit luminescence and conduction properties, thus, they have potential applications in optoelectronic devices, [1][2][3][4][5][6][7][8] high-temperature