Preparation of turbostratic and cubic boron-nitride films by electron-cyclotron-resonance, plasma-assisted, chemical vapour deposition
โ Scribed by T. Goto; T. Tanaka; H. Masumoto; T. Hirai
- Publisher
- Springer US
- Year
- 1994
- Tongue
- English
- Weight
- 748 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0957-4522
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๐ SIMILAR VOLUMES
Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p
High-quality silicon dioxide films have been deposited in the temperature range 150-425 ยฐC by electron-cyclotron resonance chemical-vapour deposition (ECR-CVD) using an oxygen plasma with silane introduced downstream. The interface state densities of 10 nm thick films measured by the high-low freque