๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Preparation of thin nanoporous silicon layers on n- and p-Si

โœ Scribed by Th Dittrich; I Sieber; S Rauscher; J Rappich


Book ID
103424962
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
996 KB
Volume
276
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Structure and optical properties of poro
โœ M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K. ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 743 KB

Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi

Structural, optical and electrical chara
โœ M. Balarin; O. Gamulin; M. Ivanda; M. Kosoviฤ‡; D. Ristiฤ‡; M. Ristiฤ‡; S. Musiฤ‡; K ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 763 KB

Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt