Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
โฆ LIBER โฆ
Preparation of thin nanoporous silicon layers on n- and p-Si
โ Scribed by Th Dittrich; I Sieber; S Rauscher; J Rappich
- Book ID
- 103424962
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 996 KB
- Volume
- 276
- Category
- Article
- ISSN
- 0040-6090
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