Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and t
Preparation of silicon cross-sectional specimens for TEM observation
โ Scribed by A. Garulli; M. Vanzi; M. Giannini; A. Armigliato
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 95 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0304-3991
No coin nor oath required. For personal study only.
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