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Preparation of PZT(53/47) thick films deposited by a dip-coating process

โœ Scribed by Xi-Yun He; Ai-Li Ding; Xin-Sen Zheng; Ping-Sun Qiu; Wei-Gen Luo


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
421 KB
Volume
66
Category
Article
ISSN
0167-9317

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โœฆ Synopsis


Crack-free polycrystalline PZT (PbZrTiO ) thick films up to 15 mm with perovskite structure have been 3 prepared from a dip-coating process. The influence of substrate characteristics, withdrawal speed and ionic concentration of precursor solution on the morphology and microstructure of PZT film was examined. The dielectric, ferroelectric and piezoelectric properties of PZT thick films on Pt / Ti substrate were measured and evaluated. PZT(53 / 47) thick films on Pt / Ti substrate exhibits a excellent electric properties, e.g.


๐Ÿ“œ SIMILAR VOLUMES


Microstructures and dielectric propertie
โœ C.M. Huang; S.F. Wang; C.J. Peng; J. Shieh; C.S. Chang; T.S. Lin ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 522 KB

Lead zirconate titanate (PZT) thick films have been successfully grown on Pt/Ti-coated (1 0 0) Si substrates by a novel aerosol plasma deposition (APD) method at room temperature. The dielectric constant (K) and loss tangent (tan ฮด) of the as-deposited film measured at 100 kHz are 223 and 0.034, res