Microstructures and dielectric properties of PZT thick films prepared by aerosol plasma deposition with microwave annealing

✍ Scribed by C.M. Huang; S.F. Wang; C.J. Peng; J. Shieh; C.S. Chang; T.S. Lin

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 522 KB
• Volume: 133
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2006.06.033

✦ Synopsis

Lead zirconate titanate (PZT) thick films have been successfully grown on Pt/Ti-coated (1 0 0) Si substrates by a novel aerosol plasma deposition (APD) method at room temperature. The dielectric constant (K) and loss tangent (tan δ) of the as-deposited film measured at 100 kHz are 223 and 0.034, respectively. The dielectric properties of the film are improved considerably by subsequent microwave annealing: K = 745 and tan δ = 0.024 are achieved for films which are microwave-annealed at 600 W for 3 min, and K = 1049, tan δ = 0.027, and remanent polarization (P r ) = 32 C cm -2 for films annealed at 800 W for 3 min. These values are comparable to those of PZT films grown by conventional deposition methods with high substrate and/or post-annealing temperatures.