Preparation of p-type GaAs layers for ohmic contact

✍ Scribed by P. Macháč; J. Náhlík

• Book ID: 104656163
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 214 KB
• Volume: 6
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00188195

✦ Synopsis

The open-tube diffusion of zinc is used for the preparation of p-type layers in gallium arsenide. The process provides the capability of forming reproducible deep diffusions (0.4-2 l~m) over short diffusion times and in the temperature range 600-650 ~ TiPdAu contacts are prepared on these layers. Using cw laser annealing we have obtained specific contact resistance 6.5 x 10-7~cm 2.