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Oxide interfacial layer in Au ohmic contacts to p-type ZnSe

✍ Scribed by K. Akimoto; T. Miyajima; H. Okuyama; Y. Mori


Book ID
107790833
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
275 KB
Volume
115
Category
Article
ISSN
0022-0248

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## Abstract P‐type ohmic contact between Au nanoparticles/ITO and p‐GaN during heat treatment is reported. Optimal conditions are selected to minimize the lowest specific contact resistance to 1.66 Γ— 10^–3^ Ξ© cm^2^, as determined by the transmission line model (TLM) after heat treatment process at