𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Microstructural analysis of NiInGe ohmic contacts for n-type GaAs

✍ Scribed by Yukito Tsunoda; Masanori Murakami

Book ID
107452830
Publisher
Springer US
Year
2002
Tongue
English
Weight
252 KB
Volume
31
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Preparation of p-type GaAs layers for oh
Preparation of p-type GaAs layers for ohmic contact
✍ P. MachÑč; J. NΓ‘hlΓ­k πŸ“‚ Article πŸ“… 1995 πŸ› Springer US 🌐 English βš– 214 KB

The open-tube diffusion of zinc is used for the preparation of p-type layers in gallium arsenide. The process provides the capability of forming reproducible deep diffusions (0.4-2 l~m) over short diffusion times and in the temperature range 600-650 ~ TiPdAu contacts are prepared on these layers. Us

Electrical and microstructural propertie
Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN
✍ Rajagopal Reddy, V. ;Choi, Chel-Jong πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 473 KB

## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 Γ— 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele