✦ LIBER ✦

Preparation of high-quality epitaxial silicon layers by vapor-phase epitaxy

✍ Scribed by N. A. Samoilov; A. V. Eliseev; S. V. Shutov

Book ID: 110120492
Publisher: Springer
Year: 1997
Tongue: English
Weight: 39 KB
Volume: 42
Category: Article
ISSN: 1063-7842
DOI: 10.1134/1.1258609

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-quality InAlAs grown by organometal

High-quality InAlAs grown by organometallic vapor phase epitaxy

✍ Aina, Leye; Mattingly, Mike 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 516 KB

High-quality GaN epitaxial layer grown b

High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

✍ Kuramata, Akito; Horino, Kazuhiko; Domen, Kay; Shinohara, Kouji; Tanahashi, Tosh 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 469 KB

Epitaxial layers of indium nitride by mi

Epitaxial layers of indium nitride by microwave-excited metalorganic vapor phase epitaxy

✍ A Wakahara; T Tsuchiya; A Yoshida 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 213 KB

Atomic layer epitaxy of CdTe on GaAs, by

Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy

✍ W.S. Wang; H.E. Ehsani; I.B. Bhat 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 642 KB

Layer quality of Sb-doped GaAs grown by

Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxy

✍ R. Yakimova; T. Paskova; I. Ivanov 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 537 KB

Optimization of High-Quality AlN Epitaxi

Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

✍ Y.A. Xi; K.X. Chen; F. Mont; J.K. Kim; E.F. Schubert; C. Wetzel; W. Liu; X. Li; 📂 Article 📅 2007 🏛 Springer US 🌐 English ⚖ 410 KB