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Preparation of epitaxial layers of silicon—III Heavy doping

✍ Scribed by S. Nielsen; G.J. Rich; K.M. Fairhurst

Book ID
113189701
Publisher
Elsevier Science
Year
1964
Tongue
English
Weight
970 KB
Volume
3
Category
Article
ISSN
0026-2714

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## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-