Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum
β Scribed by Minhong Jiang; Xinyu Liu; Guohua Chen; Jun Cheng; Xiujuan Zhou
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 294 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0957-4522
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Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150 o C and reported. X-ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300 o C f
## Abstract Study of optical and electrical properties of Mn doped ZnO films deposited by atmospheric barrier torch discharge technique on SiO~2~ substrates is reported for a wide range of Mn concentration (0.2β20 at.%). It was found that the growth of all Mnβdoped ZnO films contains secondary Mn~2