Preparation and fundamental physical properties of Sn2SbS2I3 and Pb2SbS2I3 compounds
✍ Scribed by V. I. Starosta; J. Kroutil; L. Beneš
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 222 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
The oriented ingots of isostructural compounds Sn~2~SbS~2~I~3~ and Pb~2~SbS~2~I~3~ were prepared using a modified Bridgman method. The lattice parameters of the prepared orthorhombic compounds have been determined by a X‐ray powder diffraction analysis. From the spectral response of the photoconductivity the following values for the forbidden zone of the prepared sulfides‐iodides were found: E~g~(Sn~2~SbS~2~I~3~) 1.5 eV, E~g~(Pb~2~SbS~2~I~3~) = 2.0 eV.
📜 SIMILAR VOLUMES
## Abstract For Abstract see ChemInform Abstract in Full Text.
I-V characteristics of sandwiched Al-Sb,O,-A1 structures have heen studied for different thicknesses. The current-voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb,O,