I–V characteristics and break down studies of Sb2O3 structures

✍ Scribed by Dr. J. Siva Kumar; G. Narayana; M. Chandra Shekar; Dr. U. V. Subba Rao; Dr. V. Hari Babu

• Publisher: John Wiley and Sons
• Year: 1983
• Tongue: English
• Weight: 380 KB
• Volume: 18
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170181128

✦ Synopsis

I-V characteristics of sandwiched Al-Sb,O,-A1 structures have heen studied for different thicknesses. The current-voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb,O, film thickness. The electrical breakdown studies have been done for dc and ac voltages and optical photomicrographs of breakdown patterns during different stages of voltage have been taken and the results are explained.