Preparation and characterization of electrodeposited indium selenide thin films
β Scribed by S. Gopal; C. Viswanathan; B. Karunagaran; Sa. K. Narayandass; D. Mangalaraj; Junsin Yi
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 219 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0232-1300
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## Abstract Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with s
InSe films are grown at 230-420 β’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β’ C ball