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Growth and characterization of semiconducting cadmium selenide thin films

✍ Scribed by K. N. Shreekanthan; B. V. Rajendra; V. B. Kasturi; G. K. Shivakumar

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
495 KB
Volume
38
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453 K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.

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## Abstract Polycrystalline cadmium doped gallium selenide thin films were obtained by the thermal co‐evaporation of GaSe crystals and Cd grains onto glass substrates. The structural, compositional and optical properties of these films have been investigated by means of X‐ray diffraction, energy di