Interdigitated capacitors haΒ¨e been fabricated on ferroelectric thin films of Sr Ba TiO . These deΒ¨ices haΒ¨e been characterized 0 .5 0 .5 3 at microwaΒ¨e frequencies from 50 MHz to 20 GHz, and haΒ¨e a 3.4:1 tuning range oΒ¨er a 1α40 V bias range. This is shown to originate from a relatiΒ¨e dielectric co
Preparation and characterization of (Ba, Sr)TiO3 thin films using interdigital electrodes
β Scribed by Y.L Cheng; Y Wang; H.L.W Chan; C.L Choy
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 143 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structure for ferroelectric film-based devices. In this work, barium strontium titanate (BST) thin film-based interdigital capacitors were prepared under different conditions. The relative permittivity of the films were extracted using a program developed based on Gevorgian's model. It is found that the annealing temperature has significant influence on the relative permittivity. The higher the annealing temperature, the larger the relative permittivity. Meanwhile, the relative permittivity of BST film is found to increase with the film thickness. All these phenomena are consistent with that in BST film-based parallel plate capacitors, indicating that the processingproperty relationship that was obtained in ferroelectric film-based parallel plate capacitors is a good reference for the study and development of novel ferroelectric film-based coplanar devices.
π SIMILAR VOLUMES
Ba, Sr)TiO (BST) thin-film capacitors with Ir bottom electrodes are recognized to have higher polarization 3 and leakage current as compared to those with conventional Pt electrodes. This paper describes a method to improve the leakage current of BST / Ir films by high-density plasma surface treatme