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Preferential (111) orientation of ZnSe on (100) GaAs deposited by laser-induced MOCVD

✍ Scribed by J. Simpson; J.O. Williams


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
429 KB
Volume
46
Category
Article
ISSN
0169-4332

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Preparation of highly (100)-oriented CeO
✍ Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 353 KB

CeO 2 films were prepared on Al 2 O 3 substrates by laser chemical vapor deposition at different laser power (P L ) up to 182 W. The (100)-oriented CeO 2 films were prepared at P L =101-167 W (T dep = 792-945 K). The texture coefficient (TC) of ( 200) reflection had a maximum of 6.7 at P L = 113 W (