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Preanneal effect on the ring‐shaped distribution of oxygen precipitates in Czochralski‐grown silicon

✍ Scribed by Ono, Haruhiko; Ikarashi, Taeko; Kimura, Shigeru; Tanikawa, Akio


Book ID
118224130
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
675 KB
Volume
76
Category
Article
ISSN
0021-8979

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The intensity of the infrared absorption band at 1107 cm À 1 , related to interstitial oxygen (O i ) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ-Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ-Si wafers increased as th