Praseodymium oxide growth on Si(1 0 0) by pulsed-laser deposition

✍ Scribed by D. Wolfframm; M. Ratzke; S. Kouteva-Arguirova; J. Reif

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 578 KB
• Volume: 5
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(02)00127-0

✦ Synopsis

We report on the pulsed-laser deposition of high-K praseodymium oxide films onto Si(1 0 0) surfaces by laser-ablating a sintered Pr 6 O 11 target. Optical microscope, SEM, and AFM investigations reveal two kinds of Pr x O y -surface structures, which are identified as: (a) large-scaled particles, and (b) ordered structures (rods) of different size with different orientations. The size of the particles increases with laser wavelength. The size of the ordered surface structures strongly depends on the substrate temperature. For the first time, we show characteristic Pr-Raman signals which confirm the crystalline quality of the grown layer. They also indicate that the silicon layer at the Si-Pr x O y interface is under compressive stress.