𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications

✍ Scribed by Hongfang Wang; Wang, F.; Junhong Zhang

Book ID
114619023
Publisher
IEEE
Year
2008
Tongue
English
Weight
266 KB
Volume
55
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Design tradeoff for SiGe 0.35-ΞΌm BiCMOS
Design tradeoff for SiGe 0.35-ΞΌm BiCMOS low-power and high figure-of-merit LNA
✍ Hsien-Ku Chen; Hsien-Jui Chen; Ying-Zong Juang; Chin-Fong Chiu πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 239 KB

## Abstract A 5.4‐mW ultra‐low dc power low‐noise amplifier (LNA) at 5.5 GHz, based on 0.35‐μm BiCMOS technology, is presented. The trade‐off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the use of the HBT‐cascade‐MOS methodology simultaneously satisfies t