✦ LIBER ✦

Power scalable 2.5 μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy

✍ Scribed by J. Paajaste; R. Koskinen; J. Nikkinen; S. Suomalainen; O.G Okhotnikov

Book ID: 104022208
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 460 KB
Volume: 323
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.11.073

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✦ Synopsis

We demonstrate first GaSb-based semiconductor disk laser (SDL) emitting 0.6 W of output power at 2.5 mm. A gain structure comprising 15 strained In 0.35 Ga 0.65 As 0.09 Sb 0.91 quantum wells sandwiched between Al 0.35 Ga 0.65 As 0.035 Sb 0.965 barriers was grown by molecular beam epitaxy on (1 0 0) n-doped GaSb substrate. SDL demonstrates promising potential for power scaling and wavelength tuning.

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Power scalable 2.5&#xa0;μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy

✦ Synopsis

Power scalable 2.5 μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy