High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

✍ Scribed by Gokhale, M.R.; Dries, J.C.; Studenkov, P.V.; Forrest, S.R.; Garbuzov, D.Z.

• Book ID: 117868814
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 301 KB
• Volume: 33
• Category: Article
• ISSN: 0018-9197
• DOI: 10.1109/3.644109