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High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm

✍ Scribed by Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.

Book ID
115430397
Publisher
Optical Society of America
Year
2008
Tongue
English
Weight
291 KB
Volume
33
Category
Article
ISSN
0146-9592

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Power scalable 2.5 μm (AlGaIn)(AsSb
Power scalable 2.5 μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy
✍ J. Paajaste; R. Koskinen; J. Nikkinen; S. Suomalainen; O.G Okhotnikov 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 460 KB

We demonstrate first GaSb-based semiconductor disk laser (SDL) emitting 0.6 W of output power at 2.5 mm. A gain structure comprising 15 strained In 0.35 Ga 0.65 As 0.09 Sb 0.91 quantum wells sandwiched between Al 0.35 Ga 0.65 As 0.035 Sb 0.965 barriers was grown by molecular beam epitaxy on (1 0 0)