Potential modulated reflectance spectroscopy of anodic oxide films on titanium
β Scribed by D.J. Blackwood; L.M. Peter
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 775 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0013-4686
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β¦ Synopsis
Ahtract-Potential modulated reflectance (PMR) spectroscopy has been used to mvestlgate thm anodlc oxide films formed on tltamum m sulphunc acid The ongm of the reflectance modulation IS dlscussed and the expenmental results are compared with theoretlcal calculations based on the three layer model The overall shape and the dependence of the PMR spectra on film thickness have been modelled satlsfactonly by assummg that the band gap of the oxide m the presence of an electric field IS Increased due to dlelectnc polarlsatlon The potential dependence of the modulated reflectance response for films of constant thickness was related to the electric field dlstrlbutlon m the oxide and the analysis showed that the modulated reflectance response 1s dominated by electroabsorptlon The results demonstrate that PMR spectroscopy offers a more reliable method than Mott-Schottky plots for determining the flat-band potential of the oxide
π SIMILAR VOLUMES
Impedance measurements and photocurrent spectroscopy have been used to examine the dependence on growth rate of the solid state properties of thin ( -c 20 nm) anodic oxide films on titanium. At room temperature, the relative permittivity and defect concentration profiles in the oxide were found to d
Abatraet-A photoelectrochemical investigation has been performed on thin TiO, films grown anodically in 0.5 M H,SO, solution at high growth rates. The shape of the photocurrent vs. potential curves under monochromatic irradiation (photocharacteristics) depends on the photon energy of the incident li
Anodic charging curves have been measured on Ti in Na,SO,, NaCl, NaNO,, NaH,P04, NasH PO&, Na,PO\* and NaOH solutions in the cd range 5-35 pAlcme. Formation rates are calculated in the region below Oa evolution. The results indicate the high-field approximation, with linearity between the reciproc