The changes in the mobility and carrier concentration in annealed modulation doping Si/Si 0.8 Ge 0.2 heterostructures with various channel thicknesses have been studied and mobility-limiting mechanisms were clarified. The dominant scattering mechanism was found to change to scattering due to uniform
โฆ LIBER โฆ
Post-Annealing Effects on Doping Efficiency in Ne-Sputtered a-Si
โ Scribed by Abo-Namous, S. A. ;Fane, R. W.
- Book ID
- 105378949
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 432 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0031-8965
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## Dielectric constant Leakage current density La-doped BaTiO 3 thin films with 200 nm thickness were fabricated by r.f. magnetron sputtering system onto Pt/Ti/SiO 2 /Si substrates. The effects of post-annealing and the amount of dopant on microstructure and electrical properties were studied. The