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Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

✍ Scribed by Z. V. Dzhibuti; N. D. Dolidze; G. Sh. Narsiya; G. L. Éristavi

Book ID: 110123078
Publisher: SP MAIK Nauka/Interperiodica
Year: 1997
Tongue: English
Weight: 40 KB
Volume: 23
Category: Article
ISSN: 1063-7850
DOI: 10.1134/1.1261786

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