Based on positron annihilation experiments, we have proposed that in 3C-SiC isolated silicon vacancies are responsible for positron trapping after electron irradiation. We have also proposed that in hexagonal SiC one type of vacancy defects survives after annealing at 1000 1C which is attributable t
โฆ LIBER โฆ
Positrons and electron-irradiation induced defects in the layered semiconductor InSe
โ Scribed by R. M. Cruz; R. Pareja; A. Segura; P. Moser; A. Chevy
- Book ID
- 104721996
- Publisher
- Springer
- Year
- 1992
- Tongue
- English
- Weight
- 528 KB
- Volume
- 54
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
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## Abstract We use positron annihilation to study 2โMeV ^4^He^+^ irradiated and subsequently rapidโthermalโannealed InN grown by molecularโbeam epitaxy and GaN grown by metalโorganic chemicalโvapour deposition. The irradiation fluences were in the range 5โรโ10^14^โ2โรโ10^16^โcm^โ2^. In vacancies ar
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