✦ LIBER ✦

Positron implantation profiles in elemental and multilayer systems

✍ Scribed by V.J. Ghosh

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 575 KB
Volume: 85
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(94)00331-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect profiling in elemental and multil

Defect profiling in elemental and multilayer systems: correlations of fitted defect concentrations with positron implantation profiles

✍ V.J. Ghosh; B. Nielsen; K.G. Lynn; D.O. Welch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 427 KB

Positron implantation profiles in layere

Positron implantation profiles in layered samples

✍ Jerzy Dryzek; Paweł Horodek 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 1000 KB

The Positron Diffusion Process Studied i

The Positron Diffusion Process Studied in Multilayer Systems

✍ J. Dryzek 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 267 KB

Results of positron annihilation measurements in multilayer systems with stacking sequence of copper, silver or nickel layers are presented. The layers were produced by dc electrodeposition. Great attention was paid to the positron diffusion in homogeneous areas. The results of experiments with sole

Profiles and absorption coefficients of

Profiles and absorption coefficients of positrons implanted in solids from radioactive sources

✍ M. Mourino; H. Löbl; R. Paulin 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 227 KB

New formula for description of positron

New formula for description of positron implantation profile in condensed matter

✍ Jerzy Dryzek; Jarosław Sieracki 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Traditionally, it is considered that implantation profile of positrons emitted form the radioactive source is expressed by the exponential function. The Monte Carlo simulations supported by experiments indicate that the profile exhibits more complex shape. In the presented paper we proposed the new,

Study of defects in implanted silica gla

Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy

✍ R.S. Brusa; S. Mariazzi; L. Ravelli; P. Mazzoldi; G. Mattei; W. Egger; C. Hugens 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 716 KB

Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lif