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Positron annihilation studies of vacancy-type defects

✍ Scribed by P. Hautojärvi

Book ID
112705084
Publisher
Springer
Year
1983
Tongue
English
Weight
640 KB
Volume
15
Category
Article
ISSN
0304-3843

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The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
✍ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi