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Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

โœ Scribed by H.D. Gu; T.M. Wang; W.J. Wang; K.M. Leung; C.Y. Chung

Publisher
Springer
Year
1999
Tongue
English
Weight
65 KB
Volume
68
Category
Article
ISSN
1432-0630

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The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi