𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Porous silicon host matrix for deposition by atomic layer epitaxy

✍ Scribed by M Utriainen; S Lehto; L Niinistö; Cs Dücső; N.Q Khanh; Z.E Horváth; I Bársony; B Pécz

Book ID
108389039
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
406 KB
Volume
297
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Properties of Al2O3-films deposited on s
Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
✍ Per Ericsson; Stefan Bengtsson; Jarmo Skarp 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i

Ultrathin HfO2 films grown on silicon by
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
✍ E.P. Gusev; C. Cabral Jr.; M. Copel; C. D’Emic; M. Gribelyuk 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 584 KB

We report on growth behavior, structure, thermal stability and electrical properties of ultrathin (,10 nm) hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl and H O at 300 8C on a bare silicon surface 4 2 or a thin thermally grown SiO -based interlayer. Comp