Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothing

✍ Scribed by M. Tanaka; H. Sakaki; J. Yoshino; T. Furuta

• Book ID: 104194082
• Publisher: Elsevier Science
• Year: 1986
• Weight: 68 KB
• Volume: 174
• Category: Article
• ISSN: 0167-2584
• DOI: 10.1016/0167-2584(86)90013-7