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Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing

โœ Scribed by M. Tanaka; H. Sakaki; J. Yoshino; T. Furuta


Book ID
118987030
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
393 KB
Volume
174
Category
Article
ISSN
0039-6028

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